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| R N N-CHANNEL MOSFET JCS5N50T MAIN CHARACTERISTICS Package ID VDSS Rdson @Vgs=10V Qg UPS 5A 500 V 1.6 15 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 16pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Crss ( 16pF) dv/dt RoHS ORDER MESSAGE Order codes JCS5N50VT-O-V-N-B JCS5N50RT-O-R-N-B JCS5N50CT-O-C-N-B JCS5N50FT-O-F-N-B Halogen Free NO NO NO NO Device Weight 0.35 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) Marking JCS5N50VT JCS5N50RT JCS5N50CT JCS5N50FT Package IPAK DPAK TO-220C TO-220MF Packaging Tube Tube Tube Tube 201010C 1/12 R JCS5N50T ABSOLUTE RATINGS (Tc=25) JCS5N50VT/RT 500 5 3.16 JCS5N50FT 500 5* 3.16* Value JCS5N50CT Unit V A A Parameter Drain-Source Voltage Drain Current Symbol VDSS ID T=25 T=100 IDM -continuous 1 Drain Current - pulse note 1 Gate-Source Voltage 2 Single Pulsed Avalanche Energynote 2 1 Avalanche Currentnote 1 1 Repetitive Avalanche Current note 1 3 Peak Diode Recovery dv/dt note 3 20 20* A VGSS 30 V EAS 305 mJ IAR 5 A EAR 10.1 mJ dv/dt 4.5 V/ns Power Dissipation PD TC=25 -Derate above 25 TJTSTG 91 101 41 W 0.73 0.81 0.33 W/ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55+150 TL 300 * *Drain current limited by maximum junction temperature 201010C 2/12 R JCS5N50T Tests conditions Min Typ Max Units Parameter Symbol ELECTRICAL CHARACTERISTICS Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 492 83 16 633 110 22 pF pF pF VGS(th) VDS = VGS , ID=250A 3.0 5.0 V BVDSS ID=250A, VGS=0V 500 V BVDSS/ ID=250A, referenced to 25 TJ VDS=500V,VGS=0V, TC=25 VDS=400V, IGSSF VDS=0V, TC=125 - 0.64 - V/ IDSS - - 1 10 100 A A nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=2.5A - 1.33 1.6 gfs VDS = 40V, ID=2.5A note 4 - 5.5 - S 201010C 3/12 R JCS5N50T td(on) tr td(off) tf Qg Qgs Qgd VDS =400V , ID=5A VGS =10V note 45 VDD=250V,ID=5A,RG=25 note 45 45 26 60 34 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge 133 170 214 270 15 3.5 6 20 - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 5 A ISM - - 20 A VGS=0V, IS=5A - - 1.4 V trr Qrr VGS=0V, IS=5A (note 4) dIF/dt=100A/s - 268 2.1 - ns C THERMAL CHARACTERISTIC Max JCS5N50VT/RT JCS5N50CT JCS5N50FT 1.38 110 Notes: 1Pulse width limited by maximum junction temperature 2L=22mH, IAS=5A, VDD=50V, RG=25 ,Starting TJ=25 3ISD 5A,di/dt 200A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature Unit /W /W Parameter Thermal Resistance, Junction to Case Symbol Rth(j-c) 1.23 62.5 3.08 62.5 Rth(j-A) Thermal Resistance, Junction to Ambient 1 2L=22mH, IAS=5A, VDD=50V, RG=25 , TJ=25 3ISD 5A,di/dt 200A/s,VDDBVDSS, TJ=25 4300s,2 5 201010C 4/12 R JCS5N50T ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics 10 VGS 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V Top 10 ID [A] ID [A] 150 25 1 1 Notes: 1. 250s pulse test 2. TC=25 0.1 Notes: 1.250s pulse test 2.VDS=40V 2 4 6 8 10 1 10 VD S [V] VG S [V] On-Resistance Variation vs. Drain Current and Gate Voltage 4.2 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 2 4 6 8 10 12 14 16 Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 RD S (on) [ ] VGS=10V ID R [A] 150 1 25 VGS=20V Note T j=25 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Notes: 1. 250s pulse test 2. VGS=0V 0.9 1.0 1.1 1.2 ID [A] VS D [V] Capacitance Characteristics 1.2x10 3 Gate Charge Characteristics 12 Capacitance [pF] 9.0x10 2 VG S Gate Source Voltage[V] Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd VDS=400V 10 VDS=250V VDS=100V 8 6.0x10 2 6 4 3.0x10 2 2 0.0 10 -1 V DS Drain-Source Voltage [V] 10 0 10 1 0 0 Qg Toltal Gate Charge [nC] 10 201010C 5/12 R JCS5N50T On-Resistance Variation vs. Temperature 4.0 3.5 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature 1.2 BV D S (Normalized) 1.1 3.0 RD S (on) (Normalized) 2.5 2.0 1.5 1.0 0.5 0.0 -75 1.0 0.9 Notes: 1. VGS=0V 2. ID=250A -50 -25 0 25 50 75 100 125 150 Notes: 1. VGS=10V 2. ID=2.5A -50 -25 0 25 50 75 100 125 150 0.8 -75 T j [ ] T j [ ] Maximum Safe Operating Area For JCS5N50VT/RT/CT Operation in This Area is Limited by RDS(ON) 10 1 Maximum Safe Operating Area For JCS5N50FT Operation in This Area is Limited by RDS(ON) I D Drain Current [A] I D Drain Current [A] 10s 100s 1ms 10ms 10 0 10 1 10s 100s 1ms 10 0 10 -1 Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 100ms DC 10ms Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 100ms DC 2 10 2 -1 10 VD S Drain-Source Voltage [V] 10 1 10 10 VD S Drain-Source Voltage [V] 10 1 10 Maximum Drain Current vs. Case Temperature 6 I D Drain Current [A] 4 2 0 25 50 75 100 125 150 T C Case Temperature [] 201010C 6/12 R JCS5N50T ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve For JCS5N50VT/RT (t) Thermal Response 1 D = 0 .5 0 .2 0 .1 N 1 2 3 o te s : Z J C (t)= 1 .3 8 /W M a x D u ty F a c to r, D = t1 /t2 T J M -T c = P D M * Z J C(t) 0 .1 0 .0 5 0 .0 2 0 .0 1 JC Z P DM 0 .0 1 s in g le p u ls e 1 E -4 1 E -3 0 .0 1 0 .1 t1 t2 1 E -5 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] Transient Thermal Response Curve For JCS5N50CT (t) Thermal Response 1 D = 0 .5 0 .2 0 .1 N 1 2 3 o te s : Z J C (t)= 1 .2 3 /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z J C(t) 0 .1 0 .0 5 0 .0 2 0 .0 1 JC Z P DM 0 .0 1 s in g le p u ls e 1 E -4 1 E -3 0 .0 1 0 .1 t1 t2 1 E -5 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] Transient Thermal Response Curve For JCS5N50FT D = 0 .5 (t) Thermal Response 1 0 .2 0 .1 0 .0 5 N 1 2 3 o te s : Z J C (t)= 3 .0 8 /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z J C(t) 0 .1 0 .0 2 0 .0 1 JC Z P DM s in g le p u ls e 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 t1 t2 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] 201010C 7/12 R JCS5N50T Unitmm PACKAGE MECHANICAL DATA IPAK 201010C 8/12 R JCS5N50T Unitmm PACKAGE MECHANICAL DATA DPAK 201010C 9/12 R JCS5N50T Unitmm PACKAGE MECHANICAL DATA TO-220C 201010C 10/12 R JCS5N50T Unitmm PACKAGE MECHANICAL DATA TO-220MF 201010C 11/12 R JCS5N50T NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1. 2. 3. 4. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 201010C 12/12 |
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